SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PCFG30N60LSW is a 600V N-channel Power MOSFET manufactured by onsemi. It utilizes SuperFET technology to achieve low on-state resistance and fast switching characteristics. The device is housed in a TO-247 package, suitable for high-power applications. Key electrical parameters include a drain-source breakdown voltage of 600V, a continuous drain current of 30A at 25°C, and a maximum gate-source voltage of ±20V. The typical gate charge is 108nC at VGS=10V, with a maximum RDS(on) of 140mΩ at VGS=10V.
Verify the specific manufacturing date code and lot traceability upon order confirmation. Ensure that the procurement channel provides original manufacturer packaging to prevent counterfeit risks. Confirm RoHS compliance status matches the latest datasheet revision before finalizing purchase agreements.
Select this component when designing circuits requiring a balance between low conduction loss and fast switching speed at 600V ratings. Consider the thermal management requirements associated with the TO-247 package and the specific gate charge characteristics for driver selection.
This part belongs to onsemi's SuperFET family, designed to replace traditional MOSFETs in applications demanding higher efficiency. It offers improved figure-of-merit compared to standard planar technologies, making it suitable for modern power conversion topologies.
Direct replacements may include other 600V 30A TO-247 N-channel MOSFETs from major manufacturers, provided pinouts and electrical parameters such as RDS(on) and Qg are compatible. Verify thermal resistance values for equivalent heat dissipation capabilities.