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Product Detailed Parameters
- Description：IGBT FIELD STOP 650V WAFER
- Series：-
- Mfr：onsemi
- Package：Bulk
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：99 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Wafer
- Grade：-
- Qualification：-
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Overview
PCFG50T65SQF is a silicon die-level IGBT component from onsemi, designed for integration into custom power modules. It features a 650 V collector-emitter voltage rating and supports a continuous collector current of 80 A at 25°C. The device utilizes Field Stop trench technology to achieve low saturation voltage and efficient switching characteristics. With a maximum operating junction temperature of 175°C and a die size of 3910 x 3910 μm, it provides high thermal robustness and compact footprint for advanced packaging solutions.
Feature Summary
- Field Stop trench IGBT technology for optimized switching performance
- High thermal stability with 175°C maximum junction temperature capability
- Compact bare die format enabling flexible module integration
Applications
- Custom power module assembly
- Industrial inverter systems
- Solar string inverters
- Energy storage system converters
Procurement Notes
Verify specific die marking requirements and handling protocols for bare semiconductor components. Ensure ESD-safe manufacturing environments are maintained during module integration. Confirm compatibility with intended substrate materials and bonding techniques prior to production implementation.
Selection Notes
Select this component when designing custom power modules requiring high current density and thermal efficiency. The bare die format allows engineers to optimize package geometry and thermal paths. Consider the 650V rating and 80A current capacity against system voltage and load requirements.
Part Context
This part belongs to onsemi's silicon IGBT portfolio, utilizing Field Stop technology. It serves as a core switching element for hybrid power integrated modules (PIMs) and discrete power assemblies. The component complements other onsemi devices like the AFGHL50T65SQD by offering a die-level alternative for specialized packaging needs.
Replacement Considerations
Publicly confirmed direct substitute part numbers are not available in the provided documentation. Designers should evaluate equivalent 650V Field Stop IGBT dies from onsemi or other manufacturers based on matching electrical parameters and die dimensions.
