PCFG60T120SQF

Description：IGBT FIELD STOP 1200V WAFER
Series：-

SKU:69ebfc961118 Category: Single IGBTs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT FIELD STOP 1200V WAFER
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 60A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：318 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Wafer
Grade：-
Qualification：-

Download product information

PCFG60T120SQF

Overview

PCFG60T120SQF is a 1200 V Insulated Gate Bipolar Transistor (IGBT) module from onsemi. It utilizes Ultra Field Stop Trench construction for robust performance and cost-effectiveness. The device features an optimized diode for low forward voltage and tuned switching softness, supporting junction temperatures up to 175°C.

Feature Summary

Ultra Field Stop Trench construction
Optimized diode with low forward voltage
Tuned switching softness
Positive temperature coefficient

Applications

Solar inverters
Uninterruptible power supplies (UPS)
Energy storage systems
EV charging power conversion

Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compatibility with required thermal interface materials and mounting hardware. Confirm that the package dimensions and terminal configurations match the target PCB or busbar design before finalizing procurement orders.

Selection Notes

Select this component for high-efficiency energy infrastructure applications requiring fast switching capabilities. The positive temperature coefficient facilitates easy parallel operation for higher power requirements. Consider the trade-off between conduction losses and switching frequency needs when evaluating against other IGBT series options.

Part Context

This module belongs to onsemi's advanced power solutions, specifically designed for industrial markets. It represents part of the company's strategy to provide ultra-efficient 1200 V IGBTs that minimize both conduction and switching losses, targeting demanding high-power applications in renewable energy and electric vehicle sectors.

Replacement Considerations

Consult official substitution lists for FS7 series equivalents. Verify electrical parameters and thermal characteristics carefully when considering alternative part numbers to ensure system performance integrity.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.