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The PCHMB300W6 is a single IGBT module manufactured by KYOCERA AVX, designed for high-power switching applications. It features a maximum collector-emitter voltage of 650 V and a continuous collector current rating of 200 A at 25°C. The device incorporates an integrated Fast Recovery Diode (FRD) within a brake chopper circuit configuration. Key electrical parameters include a gate-emitter leakage current of 1 µA and a maximum gate-emitter voltage of ±20 V. The module utilizes silicon technology and operates within a temperature range of -40°C to +150°C.
Verify the specific package dimensions of 94 mm x 35 mm x 30 mm against your mechanical design constraints. Confirm that the thermal management solution supports the required operating temperature range up to +150°C. Ensure the gate drive circuitry accommodates the ±20 V maximum gate-emitter voltage limit. Validate that the 200 A continuous current rating meets the peak load requirements of the target application without exceeding thermal limits.
Select this component when a combined IGBT and FRD solution is required for space-constrained high-current designs. The 650 V rating suits medium-voltage DC bus applications. Consider the screw mount style for secure mechanical attachment in heavy-duty environments. Compare the 1.45 V saturation voltage against alternative modules to assess conduction losses. Ensure the 200 A current capability aligns with the system's duty cycle and cooling capabilities.
This part belongs to the IGBT module family from KYOCERA AVX, which specializes in power semiconductor solutions. The company provides various configurations including single and half-bridge modules. This specific model focuses on integrating rectification functionality directly with the switching element, simplifying the bill of materials for applications like regenerative braking where bidirectional energy flow handling is necessary within a compact footprint.
Public confirmed substitute part numbers are not available in the provided documentation.