PCRU420D-R4707

Description：PCRU420D-R4707
Series：-

SKU:2b9abc262dae Category: Single IGBTs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：PCRU420D-R4707
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

PCRU420D-R4707

Overview

The PCRU4707 is a single IGBT module manufactured by onsemi, formerly Fairchild. It features an insulated gate bipolar transistor designed for high-power switching applications. The device requires specific gate drive conditions, necessitating a negative voltage between -5 V and -15 V for reliable turn-off and a positive voltage of +15 V to +20 V for turn-on. This component belongs to the discrete semiconductor category, specifically classified under single IGBTs.

Feature Summary

Insulated Gate Bipolar Transistor (IGBT) architecture
Requires negative gate-emitter voltage for reliable turn-off
Operates with positive gate voltage for turn-on

Applications

High-power switching circuits
Industrial motor drives
Power conversion systems

Procurement Notes

Verify the exact datasheet specifications against the manufacturer's official documentation before integration. Confirm that the gate drive circuitry can provide the required negative voltage range for turn-off and positive voltage for turn-on. Ensure thermal management aligns with the component's power dissipation requirements in the target application environment.

Selection Notes

Select this component when a single IGBT topology is required for high-voltage switching. Consider the specific gate drive voltage requirements, including the need for negative bias for turn-off. Evaluate the package type and thermal characteristics to ensure compatibility with the system's mechanical and cooling constraints.

Part Context

This part is produced by onsemi, which acquired Fairchild Semiconductor. The product line continues the legacy of Fairchild's power semiconductor offerings. It is categorized as a discrete IGBT, distinct from integrated circuits or passive components. The model number indicates its specific configuration within the manufacturer's portfolio.