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The PD55008L-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high-gain, broadband commercial and industrial applications. It operates at frequencies up to 1 GHz with a drain-source breakdown voltage of 40 V and continuous drain current of 5 A. The device delivers 8 W output power with 17 dB gain at 500 MHz. It features a PowerFLAT (5x5) surface-mount package, supports a maximum junction temperature of +150 °C, and has a power dissipation rating of 19.5 W.
Verify availability status as the component may be discontinued or subject to limited supply. Confirm RoHS compliance and moisture sensitivity levels before integration. Check for official End-of-Life notifications or Product Change Notices from STMicroelectronics to ensure long-term project viability.
Select this part for designs requiring 8 W output power at 500 MHz with 17 dB gain. Ensure the PCB layout supports the PowerFLAT (5x5) package for optimal thermal management. Verify that the operating voltage and frequency range align with the 1 GHz maximum specification and 40 V drain-source limit.
This component belongs to the PD55008 series of RF power transistors. It shares core electrical characteristics with variants like the PD55008-E but differs in packaging. The 'L' suffix typically denotes the leadless PowerFLAT package, distinguishing it from the standard PowerSO-10RF package used in other series members.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate the PD55008-E for functional equivalence if package differences are acceptable, but verify pinout and thermal pad configurations carefully.