PD55025-E

Overview

The PD55025-E is an N-channel enhancement-mode lateral RF power MOSFET from STMicroelectronics, designed for high gain and broad band commercial applications. It operates at 12 V in common source mode up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 12.5 V, continuous drain current (Id) of 7 A, and gate-source voltage (Vgs) of +40 V. At 500 MHz, it delivers 25 W output power with 14.5 dB gain. The device utilizes silicon technology and supports a maximum operating temperature of +165 C.

Feature Summary

• Common source configuration utilizing LdmoST plastic family technology
• Excellent thermal stability and reliability characteristics
• Superior linearity performance suitable for sensitive signal applications

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF applications requiring high gain

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number PD55025-E typically refers to tube packaging, while the TR-E suffix indicates reel packaging. Confirm package type and moisture sensitivity level requirements with the supplier before order placement to ensure compatibility with assembly processes.

Selection Notes

Select this component for designs requiring a single-ended N-channel RF power transistor with high efficiency. Ensure the circuit design accommodates the 12.5 V drain-source voltage limit and provides adequate thermal management for the PowerSO-10RF-2 package. Verify that the required frequency range aligns with the device's specified operational bandwidth up to 1 GHz.

Part Context

This device belongs to the PD55025-E series of lateral DMOS transistors. It represents ST’s integration of advanced LDMOS technology into a JEDEC-approved SMD plastic package. The series is engineered to replace traditional wire-bonded packages by offering improved RF performance and ease of automated assembly in surface mount configurations.

Replacement Considerations

Check for direct substitutes within the same LdmoST family. Verify pinout compatibility and thermal resistance values if replacing with other manufacturers' RF MOSFETs. Ensure the alternative device meets the 25 W output power requirement at the target frequency.