PD57030S-E

Overview

The PD57030S-E is an N-channel enhancement-mode lateral MOSFET RF power transistor from STMicroelectronics, designed for high gain and broad band commercial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V, continuous drain current (Id) of 4 A, and gate-source voltage (Vgs) of +20 V. The device delivers 30 W output power with 14 dB gain at 945 MHz. It features a PowerSO-10RF-Straight-4 package, supports surface mount installation, and has a power dissipation rating of 52.8 W. Operating temperature ranges from -65 C to +150 C.

Feature Summary

• Common source configuration providing excellent thermal stability
• High gain performance suitable for broad band applications
• Designed for reliability in commercial and industrial environments

Applications

• Broadband commercial RF amplifiers
• Industrial RF signal processing
• Base station amplifier stages

Procurement Notes

Verify the specific suffix 'E' against official datasheets to confirm compliance with RoHS directives and Ecopack2 standards. Confirm that the PowerSO-10RF-Straight-4 package variant matches the required footprint for PCB layout. Ensure humidity sensitivity handling procedures are followed during assembly as indicated by moisture sensitivity classifications.

Selection Notes

Select this component when a 65 V breakdown voltage and 30 W output power are required at frequencies up to 1 GHz. Compare the 14 dB gain specification against system requirements for broadband amplification. Consider the 52.8 W power dissipation limit and the need for adequate thermal management within the PowerSO-10RF package constraints.

Part Context

This part belongs to the PD57030 series of LDMOST plastic family transistors. It shares the same core technology and package type as variants like PD57030-E but may differ in specific environmental or packaging certifications. It is distinct from higher power models such as the PD57060S-E which offers 60 W output.

Replacement Considerations

Direct substitutes within the same family include PD57030-E. For higher power needs, consider PD57060S-E. Verify pin compatibility and thermal characteristics before swapping with other RF MOSFETs.