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The PD57030S is an N-channel enhancement-mode lateral MOSFET RF power transistor from the LdmoST Plastic Family by STMicroelectronics. It operates at 28 V in common source mode at frequencies up to 1 GHz. Key electrical specifications include a drain-source voltage of 65 V, continuous drain current of 4 A, and maximum power dissipation of 52.8 W. At 945 MHz with a 28 V supply and 50 mA bias current, it delivers 30 W output power with 14 dB gain and 53% drain efficiency. The device utilizes the PowerSO-10RF-Straight-4 package.
Verify component authenticity through authorized channels. Confirm datasheet revisions and RoHS compliance status prior to integration. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate that the straight lead variant matches the specific PCB footprint requirements for the intended assembly process.
Select this component when a 30 W output power capability at 945 MHz is required within a plastic SMD package. Consider the 65 V breakdown voltage and 4 A current limits for circuit design margins. Evaluate the 1.8 °C/W junction-to-case thermal resistance against the available heatsinking infrastructure to maintain safe operating temperatures under continuous load conditions.
The PD57030S belongs to the PD57030 series, representing the straight lead version of the LdmoST Plastic Family. It shares core electrical characteristics with the formed lead PD57030 variant but differs in physical package termination style. This family utilizes ST's LDMOS technology optimized for RF power applications requiring high reliability and ease of surface mount assembly.
PD57030 (formed lead variant)