ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS 7.5V POWERSO10
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- Technology：LDMOS
- Frequency：870MHz
- Gain：15dB
- Voltage - Test：7.5 V
- Current Rating (Amps)：5A
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：6W
- Voltage - Rated：25 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：PowerSO-10 Exposed Bottom Pad
- Supplier Device Package：10-PowerSO
- Configuration：-
Download product information
Overview
The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for high gain and broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz. The device boasts excellent gain, linearity, and reliability using ST’s latest LDMOS technology. It is mounted in the first true SMD plastic RF power package, PowerSO-10RF. At 870 MHz, it delivers an output power (POUT) of 6 W with 13 dB gain. Its superior linearity makes it suitable for portable radio and UHF RFID reader applications.
Feature Summary
- Common source configuration with excellent thermal stability
- Broadband performance capabilities
- ESD protection included
- Compliant with the 2002/95/EC European directive
Applications
- Portable radio systems
- UHF RFID readers
- Broadband commercial applications
- Industrial RF applications
Procurement Notes
Verify component authenticity through authorized channels as the part status is obsolete. Confirm RoHS compliance and MSL rating prior to integration. Check for updated documentation or direct support requests via the ST Online Support Center. Ensure supply chain sources are legitimate distributors capable of worldwide shipping.
Selection Notes
Select this component for designs requiring 6 W output power at 870 MHz with 13 dB gain. Ensure the circuit supports a 7 V common source operating voltage. Verify compatibility with the PowerSO-10RF package for assembly requirements. Consider its suitability for broadband applications up to 1 GHz.
Part Context
This LDMOS transistor belongs to STMicroelectronics' RF power transistor lineup. It utilizes advanced LDMOS technology for improved linearity and reliability. The PowerSO-10RF package is JEDEC approved and optimized for high-power SMD applications, offering ease of assembly and excellent RF performance.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided data. As the product status is obsolete, consult official ST resources for potential replacement recommendations.
