PD85015STR-E

Overview

The PD85015STR-E is an N-channel enhancement-mode lateral MOSFET from the LdmoST plastic family, designed for high gain and broadband commercial applications. It operates at 13.6 V in common source mode up to 1 GHz. Key electrical parameters include a drain-source voltage of 40 V, continuous drain current of 5 A, and power dissipation of 59 W at 70 °C case temperature. The device delivers 15 W output power with 16 dB gain at 870 MHz. It features excellent thermal stability, ESD protection, and compliance with European directives.

Feature Summary

• Common source configuration optimized for high gain and linearity
• Excellent thermal stability with low junction-to-case thermal resistance
• Integrated ESD protection mechanisms
• JEDEC approved PowerSO-10RF straight lead package

Applications

• Car mobile radio systems
• Broadband commercial RF amplifiers
• Industrial RF applications

Procurement Notes

Verify the specific ordering suffix STR-E corresponds to the straight lead variant in tape and reel packaging. Confirm that the component meets the required environmental compliance standards such as ECOPACK specifications. Ensure the procurement channel provides valid traceability documentation for production data components.

Selection Notes

Select this component when 15 W output power at 870 MHz is required with 16 dB gain. The 40 V drain-source voltage rating supports standard 12 V or 13.6 V supply rails. Consider the straight lead PowerSO-10RF package for surface mount assembly requirements. Evaluate thermal management needs based on the 1.6 °C/W junction-to-case resistance.

Part Context

This part belongs to the PD85015-E series within STMicroelectronics' LdmoST plastic family. It shares the same core die and electrical characteristics with variants like PD85015-E (tube), PD85015S-E (straight tube), and PD85015TR-E (formed lead reel). The STR-E suffix specifically denotes the straight lead configuration in tape and reel packaging.

Replacement Considerations

PD85015-E

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 165 °C.

Does the device support load mismatch conditions?

Yes, it can withstand a 20:1 VSWR load mismatch at all phase angles when operated at 17 V drain voltage and 300 mA quiescent current.

What is the typical gate-source threshold voltage?

The typical gate-source threshold voltage (VGS(Q)) is 4.3 V at a drain-source voltage of 10 V and drain current of 150 mA.