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The PDMB75W6 is a dual common source IGBT module manufactured by KYOCERA AVX. It features a 650 V collector-emax voltage rating and supports a continuous collector current of 75 A at 25°C. The device incorporates an integrated FRD (Fast Recovery Diode) within a single package configuration. Key electrical parameters include a maximum gate-emitter voltage of 20 V, a collector-emitter saturation voltage of 1.45 V, and a gate leakage current of 1 uA. The module is designed for chassis mounting and operates within a temperature range of -40°C to +150°C.
Verify the current lifecycle status and availability directly with KYOCERA AVX or authorized distributors before procurement planning. Confirm that the specific package dimensions and pinout match the target design requirements. Ensure that thermal management solutions are adequate for the specified power dissipation levels under actual operating conditions.
Select this component when a dual IGBT structure with an integrated diode is required for high-power applications. Consider the 650V rating and 75A current capacity against system voltage and load requirements. Evaluate the chassis mount form factor for compatibility with existing cooling infrastructure and enclosure designs.
This part belongs to the IGBT Modules category from KYOCERA AVX. It utilizes Silicon technology and is classified under Thyristors/IGBTs subcategories. The manufacturer provides datasheets and ECAD models for integration into electronic design workflows.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for potential cross-reference options.