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The PEMZ1,115 is a dual N-channel enhancement mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 2 A. The device has a typical on-resistance (Rds(on)) of 380 mΩ at a gate-source voltage (Vgs) of 4.5 V. It is housed in an SOT-363 (SC-88) surface-mount package with six pins. The component operates within a temperature range from -55 °C to +150 °C and has a power dissipation rating of 375 mW.
Verify the specific ordering code suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with standard manufacturing lot sizes. Check for any regional compliance certifications required for the target market before finalizing procurement orders.
Select this component when a dual N-channel solution is required in a minimal footprint. Ensure the operating voltage does not exceed the 60 V limit. Verify that the thermal design accommodates the 375 mW power dissipation in the intended enclosure environment. Compare Rds(on) requirements against alternative packages if higher current capacity is needed.
This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for space-constrained portable electronics. The SOT-363 package allows for high-density PCB layouts, replacing discrete components to reduce assembly costs. It serves as a complementary device in power distribution networks where multiple low-current switches are necessary.
Publicly confirmed substitute part numbers are not available in the provided reference data. Consult official Nexperia cross-reference tools or distributor databases for verified equivalents based on pin compatibility and electrical parameters.