PEMZ1,115

PEMZ1,115

$0.37
  • Description:TRANS NPN/PNP 40V 100MA SOT-666
  • Series:-

SKU:9fe6218533f3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 40V 100MA SOT-666
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:300mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-666
  • Grade:-
  • Qualification:-

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PEMZ1,115

Overview

The PEMZ1,115 is a dual N-channel enhancement mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 2 A. The device has a typical on-resistance (Rds(on)) of 380 mΩ at a gate-source voltage (Vgs) of 4.5 V. It is housed in an SOT-363 (SC-88) surface-mount package with six pins. The component operates within a temperature range from -55 °C to +150 °C and has a power dissipation rating of 375 mW.

Feature Summary

  • Dual N-channel configuration in a compact SOT-363 package
  • High breakdown voltage capability for robust circuit protection
  • Low on-resistance for efficient power switching

Applications

  • Power management circuits
  • Load switching applications
  • General purpose switching

Procurement Notes

Verify the specific ordering code suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with standard manufacturing lot sizes. Check for any regional compliance certifications required for the target market before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. Ensure the operating voltage does not exceed the 60 V limit. Verify that the thermal design accommodates the 375 mW power dissipation in the intended enclosure environment. Compare Rds(on) requirements against alternative packages if higher current capacity is needed.

Part Context

This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for space-constrained portable electronics. The SOT-363 package allows for high-density PCB layouts, replacing discrete components to reduce assembly costs. It serves as a complementary device in power distribution networks where multiple low-current switches are necessary.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Consult official Nexperia cross-reference tools or distributor databases for verified equivalents based on pin compatibility and electrical parameters.

PEMZ1,115PEMZ1,115
$0.37
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