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The PH1090-175L is an NPN silicon microwave power transistor designed for avionics pulsed power applications. Operating at a center frequency of 1090 MHz, it delivers 175W output power with a collector efficiency of 55% under standard test conditions (Vcc = 45V, Pin = 26W). The device features a common base configuration and supports broadband Class C operation. Key electrical ratings include a collector-emitter breakdown voltage of 80V, a peak collector current of 10.5A, and a maximum junction temperature of 200°C. It utilizes a hermetic metal/ceramic package to ensure reliability in demanding environments.
Verify the specific revision level against the latest MACOM datasheet before procurement. Confirm that the hermetic metal/ceramic package meets the thermal and mechanical requirements of the target assembly. Ensure that the ordering suffix aligns with the required RoHS compliance status as defined by the manufacturer's current product release documentation.
Select this component when designing circuits requiring 175W pulsed output at 1090 MHz. The common base configuration necessitates appropriate biasing networks for Class C operation. Designers must account for the 3:1 load mismatch tolerance and ensure the thermal management system can handle the specified power dissipation while maintaining the junction temperature below the 200°C absolute maximum rating.
This part belongs to the PH1090 series of avionics pulsed power transistors manufactured by MACOM Technology Solutions. The series includes variants such as the PH1090-75L, PH1090-350L, and PH1090-550S, which share similar architectural features but differ in power handling capabilities and pulse duty cycle specifications. These devices are engineered for robust performance in military and aerospace communication systems.
Direct replacements within the same family include the PH1090-75L and PH1090-350L. Verify that the substitute part number matches the required output power and pulse duration constraints of the application circuit.