PH1090-350L

Overview

The PH1090-350L is an NPN silicon microwave power transistor designed for avionics pulsed power applications. Operating at a frequency of 1090 MHz with a 250µs pulse width and 10% duty cycle, it delivers 350W output power. Key electrical specifications include a collector-emitter breakdown voltage (BV_CES) of 80V, a peak collector current of 17A, and a maximum power dissipation of 875W. The device features internal input and output impedance matching, achieving a typical collector efficiency of 61% and a power gain between 8.0 and 10.0 dB under standard test conditions.

Feature Summary

• Common base configuration optimized for broadband Class C operation
• High efficiency inter-digitized geometry with diffused emitter ballasting resistors
• Internal input and output impedance matching for simplified circuit integration
• Hermetic metal/ceramic package construction ensuring robust performance

Applications

• Avionics pulsed power amplification systems
• Radar transmitter modules requiring high peak power output
• Broadband RF power generation circuits

Procurement Notes

Verify the specific revision status of the datasheet, as M/A-COM designations may indicate advanced or preliminary stages where volume production commitment is not guaranteed. Confirm RoHS compliance requirements against current project specifications. Ensure thermal management solutions align with the specified junction temperature limits and thermal resistance values to maintain reliability during pulsed operation.

Selection Notes

Select this component for applications requiring high peak power at 1090 MHz with strict pulse duration constraints. Evaluate the 80V collector-emitter voltage rating against system supply voltages to ensure adequate margin. Consider the hermetic packaging requirements for environmental protection in avionics environments. Verify that the internal impedance matching meets the system's source and load impedance needs without additional external components.

Part Context

This part belongs to the MACOM portfolio of silicon microwave power transistors engineered for demanding RF applications. It utilizes gold metallization and specialized geometry to achieve high efficiency and reliability. The PH1090 series is specifically tailored for pulsed power scenarios where consistent performance under high stress conditions is critical for mission-critical avionics and radar systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.