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Product Detailed Parameters
- Description：RF TRANS NPN 70V 2L-FLG
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：70V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：7.4dB
- Power - Max：350W
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：10.5A
- Operating Temperature：200°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：2L-FLG
- Supplier Device Package：2L-FLG
- Grade：-
- Qualification：-
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Overview
The PH1214-110M is a silicon RF bipolar transistor manufactured by MACOM Technology Solutions. It is designed for high-power radio frequency applications, operating within the 1.20 to 1.40 GHz frequency range. The device delivers an output power of 110 watts and requires a drain voltage of 40 volts. This component belongs to the RF bipolar transistor category and utilizes silicon technology. It is packaged in a specific configuration suitable for high-power RF circuits, intended for robust performance in demanding communication systems.
Feature Summary
- High output power capability of 110 watts at specified frequencies
- Operates on standard 40-volt supply rails
- Silicon-based construction for reliable RF performance
Applications
- Base station amplifiers
- Broadband RF power amplification
- Military communication systems
Procurement Notes
Verify the exact ordering suffix and package type against the official MACOM datasheet before procurement. Confirm lead times and minimum order quantities directly with authorized distributors, as these parameters are subject to change. Ensure compliance with RoHS directives if required by your specific application standards.
Selection Notes
Select this component when 110-watt output power is required in the 1.2-1.4 GHz band. Ensure the thermal management solution supports the power dissipation characteristics of this silicon bipolar device. Verify that the system biasing aligns with the 40-volt requirement for optimal linearity and efficiency.
Part Context
This part is part of MACOM's portfolio of high-power RF transistors. It serves as a higher-power alternative to lower-wattage variants in the same frequency family. The device is engineered for linear amplification tasks where high power density and wide bandwidth are critical requirements for modern RF infrastructure.
Replacement Considerations
Direct replacements must match the 110W power rating, 40V operation, and 1.2-1.4 GHz frequency range. Check pin compatibility and thermal pad dimensions carefully. Consult MACOM for qualified alternate parts or verify cross-reference data from authorized distributors to ensure functional equivalence.
