PH1214-6M

$196.29

Description：RF TRANS NPN 65V 1.4GHZ 2L-FLG
Series：-

SKU:9489a193c55a Category: Bipolar RF Transistors Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 65V 1.4GHZ 2L-FLG
Series：-
Mfr：MACOM Technology Solutions
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：65V
Frequency - Transition：1.4GHz
Noise Figure (dB Typ @ f)：-
Gain：7dB
Power - Max：30W
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：1.5A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：2L-FLG
Supplier Device Package：2L-FLG
Grade：-
Qualification：-

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PH1214-6M

Overview

The PH1214-6M is an NPN silicon microwave power transistor manufactured by M/A-COM Technology Solutions. Designed for common base configuration, this component supports broadband Class C operation with high efficiency inter-digitized geometry and diffused emitter ballasting resistors. It features internal input and output impedance matching within a hermetic metal/ceramic package. The device operates in the 1.2 to 1.4 GHz frequency range, delivering 3W of radar pulsed power with a 2ms pulse width and 20% duty cycle. Gold metallization ensures reliability, and the part is RoHS compliant.

Feature Summary

NPN silicon microwave power transistor with common base configuration
Broadband Class C operation capability
Internal input and output impedance matching
Hermetic metal/ceramic packaging

Applications

Radar pulsed power systems
Microwave communication transmitters
Broadband RF amplification

Procurement Notes

Verify the specific manufacturer source document when procuring, as historical data may originate from Tyco Electronics or M/A-COM. Confirm that the ordering suffix matches the required hermetic package and RoHS compliance status. Cross-reference the electrical specifications against the official datasheet to ensure compatibility with the intended 1.2-1.4 GHz application requirements.

Selection Notes

Select this component for applications requiring 3W pulsed power at 1.2-1.4 GHz. Ensure the design accommodates the common base configuration and Class C biasing requirements. Verify thermal management capabilities for the hermetic metal/ceramic package under specified 2ms pulse and 20% duty cycle conditions.

Part Context

This part belongs to the PH1214 series of radar pulsed power transistors. Similar variants include the PH1214-3L, which shares identical electrical characteristics and frequency range. The series is characterized by high-efficiency inter-digitized geometry and gold metallization systems suitable for demanding microwave environments.