PH2729-110M

PH2729-110M

$452.28
  • Description:RF TRANS NPN 63V 2.9GHZ 2L-FLG
  • Series:-

SKU:08bc2ee631b0 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 63V 2.9GHZ 2L-FLG
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):63V
  • Frequency - Transition:2.7GHz ~ 2.9GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:6.8dB
  • Power - Max:330W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):8A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:2L-FLG
  • Supplier Device Package:2L-FLG
  • Grade:-
  • Qualification:-

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PH2729-110M

Overview

The PH2729-110M is a single-element, S-band silicon NPN RF power bipolar transistor designed for high-frequency applications. It features a hermetically sealed metal-ceramic package with flange mounting and two terminals. The device includes emitter ballasting resistors to enhance performance stability. Key electrical specifications include a maximum collector current of 15 A and a maximum operating temperature of 200 °C. The component is RoHS compliant and utilizes a rectangular ceramic-metal sealed cofired construction.

Feature Summary

  • Hermetically sealed metal-ceramic construction for environmental protection
  • Integrated emitter ballasting resistors for improved thermal stability
  • Flange mount configuration for efficient heat dissipation
  • High-temperature operation capability up to 200 °C

Applications

  • S-band RF power amplification
  • Military radar systems
  • Space communication equipment

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to ensure correct package and screening levels. Confirm RoHS compliance status and hermetic sealing requirements match the intended application environment. Cross-reference the JESD-30 code R-CDFM-F2 with mechanical drawings to validate flange mount dimensions and terminal configurations before procurement.

Selection Notes

Select this component for S-band applications requiring robust silicon NPN technology with high thermal tolerance. Ensure the system design accommodates the 15 A maximum collector current limit and the flange mount thermal interface. Verify that the base-connected case style aligns with the circuit grounding scheme and that the operating temperature range remains within the specified 200 °C maximum.

Part Context

This part belongs to MACOM's portfolio of discrete RF power transistors. It represents a silicon-based solution for S-band frequencies, distinct from their GaAs or GaN MMIC offerings. The hermetic metal-ceramic package indicates suitability for high-reliability environments where standard plastic packages are insufficient.

Replacement Considerations

No public substitute part numbers are confirmed in available documentation. Direct replacements require matching the S-band frequency range, NPN polarity, 15 A current rating, and hermetic flange mount package type. Consult MACOM engineering for qualified alternatives if this specific part number is unavailable.

PH2729-110MPH2729-110M
$452.28
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