PH3135-65M

PH3135-65M

$380.34
  • Description:RF TRANS NPN 65V
  • Series:-

SKU:ac061526dc0a Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 65V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:8.23dB ~ 9.09dB
  • Power - Max:65W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):7.7A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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PH3135-65M

Overview

The PH3135-65M is an NPN silicon microwave power transistor designed for radar pulsed applications. It delivers 65W output power within the 3.1 to 3.5 GHz frequency range, utilizing a 100µs pulse width and 10% duty cycle. The device operates with a collector-emitter voltage of 36V and features internal input and output impedance matching. Key electrical specifications include a breakdown voltage (BV_CES) of 65V, thermal resistance (R_TH(JC)) of 0.5°C/W, and a peak collector current of 7.7A. Maximum power dissipation is rated at 350W.

Feature Summary

  • Common base configuration supporting broadband Class C operation
  • High efficiency inter-digitized geometry with diffused emitter ballasting resistors
  • Internal input and output impedance matching for simplified integration
  • Hermetic metal/ceramic package construction

Applications

  • Radar pulsed power systems
  • Microwave communication transmitters
  • Electronic warfare equipment

Procurement Notes

Verify component authenticity through authorized MACOM Technology Solutions distributors or certified supply chain partners. Confirm RoHS compliance status and check for specific lot traceability requirements relevant to defense or aerospace procurement standards before finalizing acquisition orders.

Selection Notes

Select this component for high-power radar applications requiring stable performance in the S-band spectrum. Ensure thermal management solutions can handle the specified junction temperature limits and that the driving circuit supports the required common base configuration for optimal Class C efficiency.

Part Context

This part belongs to the M/A-COM Technology Solutions portfolio of silicon microwave power transistors. It is engineered specifically for demanding pulsed power environments where reliability and high efficiency are critical operational parameters.

Replacement Considerations

Consult official MACOM documentation for direct cross-reference data. Verify pinout compatibility and thermal interface dimensions when evaluating alternative suppliers or updated generation components.

PH3135-65MPH3135-65M
$380.34
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