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The PH3135-65M is an NPN silicon microwave power transistor designed for radar pulsed applications. It delivers 65W output power within the 3.1 to 3.5 GHz frequency range, utilizing a 100µs pulse width and 10% duty cycle. The device operates with a collector-emitter voltage of 36V and features internal input and output impedance matching. Key electrical specifications include a breakdown voltage (BV_CES) of 65V, thermal resistance (R_TH(JC)) of 0.5°C/W, and a peak collector current of 7.7A. Maximum power dissipation is rated at 350W.
Verify component authenticity through authorized MACOM Technology Solutions distributors or certified supply chain partners. Confirm RoHS compliance status and check for specific lot traceability requirements relevant to defense or aerospace procurement standards before finalizing acquisition orders.
Select this component for high-power radar applications requiring stable performance in the S-band spectrum. Ensure thermal management solutions can handle the specified junction temperature limits and that the driving circuit supports the required common base configuration for optimal Class C efficiency.
This part belongs to the M/A-COM Technology Solutions portfolio of silicon microwave power transistors. It is engineered specifically for demanding pulsed power environments where reliability and high efficiency are critical operational parameters.
Consult official MACOM documentation for direct cross-reference data. Verify pinout compatibility and thermal interface dimensions when evaluating alternative suppliers or updated generation components.