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PHB32N06LT,118 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 60V 34A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PHB32N06LT,118
- Description：MOSFET N-CH 60V 34A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 5V
- Rds On (Max) @ Id, Vgs：37mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：1280 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：97W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for PHB32N06LT,118
Single FETs, MOSFETs Overview
The PHB32N06LT is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a D2PAK plastic surface-mounted package (SOT404). The device is designed for computing, communications, consumer, and industrial applications. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 34 A at 25 °C mounting base temperature, and a total power dissipation of 97 W. The on-state resistance is specified as 40 mΩ at VGS = 5V and ID = 20A, or 43 mΩ at VGS = 4.5V.
Single FETs, MOSFETs Feature Summary
- Suitable for logic level gate drive sources
- Utilizes TrenchMOS technology for enhanced performance
Single FETs, MOSFETs Applications
- General purpose switching
- Switched-mode power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and package variant against the official Nexperia datasheet before procurement. Confirm that the application environment remains within the specified junction temperature and power dissipation limits to ensure device reliability. Check for any recent product status changes or obsolescence notices directly from the manufacturer.
Single FETs, MOSFETs Selection Notes
Select this component when a low on-state resistance is required at logic-level gate voltages. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet. Verify that the peak drain current and avalanche energy ratings meet the specific circuit requirements for robust operation.
Single FETs, MOSFETs Part Context
This part belongs to the Nexperia TrenchMOS family of N-channel enhancement mode FETs. It is specifically engineered for applications requiring efficient switching with logic-level compatibility. The D2PAK package provides a balance between power handling capability and surface-mount convenience for industrial and consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Consult the official Nexperia documentation for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical specifications and thermal characteristics against the original datasheet.
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