PHC21025,118

$0.25

Description：MOSFET N/P-CH 30V SOT96-1
Series：*

SKU:32bf2582b7f5 Category: FET, MOSFET Arrays Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V SOT96-1
Series：*
Mfr：NXP USA Inc.
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-

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PHC21025,118

Overview

The PHC21025 is a complementary intermediate level N-channel and P-channel enhancement mode Field-Effect Transistor (FET) utilizing vertical D-MOS technology. It features a drain-source voltage of 30 V for both channels, with continuous drain currents of 3.5 A (N-channel) and -2.3 A (P-channel). The device offers low on-state resistance, typically 0.08 Ω for the N-channel and 0.22 Ω for the P-channel at 25 °C. Packaged in an SO8 plastic small outline package (SOT96-1), it supports a junction temperature up to 150 °C and total power dissipation of 1 W at 25 °C ambient.

Feature Summary

Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics

Applications

Motor and actuator drivers
Power management
Synchronized rectification

Procurement Notes

Verify the specific ordering suffix against current distributor catalogs to ensure correct packaging configuration. Confirm that the component meets the required industrial or consumer application standards as automotive qualification is not indicated. Review the latest datasheet revision for any updates to thermal derating curves or absolute maximum ratings before finalizing design specifications.

Selection Notes

Select this complementary pair for circuits requiring matched N-channel and P-channel switching performance within a single package. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDSon performance. Consider the thermal resistance from junction to solder point when designing PCB layouts to maintain operation within the 150 °C junction temperature limit under expected load conditions.

Part Context

This component belongs to NXP's portfolio of complementary MOSFETs designed for general-purpose switching applications. It utilizes vertical D-MOS technology to achieve efficient power handling in a compact SO8 package. The device is intended for computing, communications, consumer, and industrial sectors where space-saving complementary pairs are beneficial.