PHC2300,118

Description：MOSFET N/P-CH 300V 0.34A 8SO
Series：-

SKU:5d708471a617 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 300V 0.34A 8SO
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：300V
Current - Continuous Drain (Id) @ 25°C：340mA, 235mA
Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：102pF @ 50V
Power - Max：1.6W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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PHC2300,118

Overview

The PHC2300,118 is a complementary enhancement mode MOS transistor pair from Nexperia, integrating one N-channel and one P-channel device in an SO8 plastic package (SOT96-1). Designed for high-frequency applications due to fast switching characteristics, it supports drain-source voltages up to 300 V. The N-channel unit handles a continuous drain current of 340 mA with a typical on-resistance of 6 Ω, while the P-channel unit manages 235 mA with a typical resistance of 17 Ω. Total power dissipation reaches 1.6 W at 80 °C solder point temperature.

Feature Summary

Complementary N-channel and P-channel enhancement mode MOS transistors integrated into a single plastic package
Fast switching characteristics suitable for high-frequency applications

Applications

High-speed line drivers
Line transformer drivers
Relay drivers
Universal line interface in telephone sets

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Confirm that the application environment remains within the specified junction temperature limits of -55 °C to +150 °C. Ensure design safeguards account for the absolute maximum ratings to prevent permanent damage from stress conditions exceeding the defined limiting values.

Selection Notes

Select this component when a compact solution requires matched complementary MOSFETs for push-pull or bridge configurations. The SO8 package offers a balance between thermal performance and board space efficiency. Verify that the required gate drive voltage aligns with the threshold characteristics and that the load current stays within the continuous drain current limits for both channels under expected operating temperatures.

Part Context

This part belongs to the Nexperia discrete MOSFET portfolio, specifically designed as a complementary pair. It utilizes the SOT96-1 (SO8) package standard. The product is intended for computing, communications, consumer, and industrial applications only, excluding automotive use unless explicitly qualified separately.