PHKD13N03LT,518

Description：MOSFET 2N-CH 30V 10.4A 8SO
Series：TrenchMOS™

SKU:a393425f3616 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 10.4A 8SO
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：10.4A
Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：752pF @ 15V
Power - Max：3.57W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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PHKD13N03LT,518

Overview

The PHKD13N03LT is a dual logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in an SOT96-1 (SO8) plastic package. It features a drain-source voltage of 30 V and a continuous drain current of 10.4 A at 25 °C. The device exhibits a typical on-state resistance of 17 mΩ at VGS=10V and ID=8A, with a total gate charge of 10.7 nC. Total power dissipation reaches 3.57 W at 25 °C solder point temperature, operating within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Low conduction losses achieved through minimized on-state resistance
Simplified gate drive requirements enabled by low gate charge
High-frequency operation supported by fast switching characteristics

Applications

DC-to-DC converters
Lithium-ion battery applications
Notebook computers
Portable equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging configuration. Confirm that the component meets RoHS compliance standards required for your assembly process. Check the official datasheet revision history to validate the most recent electrical specifications before finalizing design integration.

Selection Notes

Select this component for designs requiring dual N-channel FETs in a compact SO8 footprint. Ensure the application operates within the specified 30 V drain-source voltage limit. Verify that the thermal management strategy accommodates the 3.57 W power dissipation rating under expected load conditions and ambient temperatures.

Part Context

This device belongs to Nexperia's TrenchMOS logic level FET portfolio, designed for computing, communications, consumer, and industrial sectors. It integrates two independent N-channel enhancement mode transistors into a single small outline package, optimizing board space while maintaining high efficiency for portable and notebook applications.

Replacement Considerations

Consult the official Nexperia documentation for verified substitute part numbers. Do not assume functional equivalence with other dual MOSFETs without cross-referencing pinout configurations and absolute maximum ratings.

FAQ

What is the package type for the PHKD13N03LT?

The component is housed in an SOT96-1 package, which corresponds to an 8-lead plastic small outline package (SO8).

Is this device suitable for automotive applications?

No, the datasheet explicitly states it is not automotive qualified and is intended for computing, communications, consumer, and industrial applications only.