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The PHPT610030NKX is a high power NPN/NPN double bipolar transistor manufactured by Nexperia USA Inc. It is housed in an SOT1205 (LFPAK56D) surface-mounted package with eight leads. The device supports a collector-emitter voltage of 100 V and a continuous collector current of 3 A per transistor. It features a DC current gain of at least 150 at 500 mA and a transition frequency of 140 MHz. The component operates within a junction temperature range up to 175 °C and includes thermal resistance values of 6 K/W from junction to solder point.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Confirm that the non-automotive qualification status aligns with your project requirements, as automotive-grade alternatives may be necessary for regulated vehicle applications.
Select this component when a dual NPN configuration is required in a compact LFPAK56D footprint. Ensure the design accommodates the 100 V collector-emitter rating and 3 A current limit. Evaluate thermal management strategies based on the specified junction-to-solder thermal resistance to maintain operation within the 175 °C maximum junction temperature.
This part belongs to the PHPT610030 series of high power double bipolar transistors. The PNP/PNP complement is designated as PHPT610030PK, while the mixed NPN/PNP variant is identified as PHPT610030NPK. All variants share the same LFPAK56D package outline and general thermal characteristics.
Direct functional substitutes include the PHPT610030PK for PNP/PNP configurations and the PHPT610030NPK for complementary pairs. Verify pinout compatibility and thermal performance metrics before substituting.