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The PHPT610030PK-QX is a dual PNP bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc. It features a maximum collector current of 3 A and a collector-emitter breakdown voltage of 100 V. The device is housed in an LFPAK56D-8 package with a maximum power dissipation of 1.25 W. Key electrical parameters include a minimum DC current gain (hFE) of 150 at 500 mA and 10 V, a saturation voltage of 360 mV at 200 mA base and 2 A collector current, and a transition frequency of 125 MHz. It operates within a temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.
Verify the specific suffix against official Nexperia documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with your assembly process regarding the LFPAK56D-8 footprint. Confirm that the AEC-Q101 qualification meets your project's automotive grade requirements before finalizing procurement.
Select this component when a dual PNP configuration is required with high current handling capabilities up to 3 A. The LFPAK56D-8 package offers superior thermal performance compared to standard surface-mount packages. Consider the 100 V rating for applications requiring higher voltage margins than standard 60 V devices provide.
This part belongs to Nexperia's high-power bipolar transistor portfolio designed for robust industrial and automotive environments. The PHPT series utilizes advanced silicon technology to deliver high current density in compact packages. It complements NPN variants in the same family for creating matched push-pull amplifier or driver stages.
Check for direct substitutes such as the PHPT610035PKX if a dual PNP variant with identical pinout and specifications is needed. Verify package compatibility and electrical limits before substituting with other manufacturers' dual PNP transistors.