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PHT2NQ10T,135 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 100V 2.5A SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PHT2NQ10T,135
- Description：MOSFET N-CH 100V 2.5A SOT223
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：430mOhm @ 1.75A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：6.25W (Tc)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-73
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for PHT2NQ10T,135
Single FETs, MOSFETs Overview
The PHT2NQ10T,135 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. It features a drain-source voltage rating of 100 V and a continuous drain current capability of 2.5 A at 25 °C. The device operates within a junction temperature range of -65 °C to +150 °C. Key electrical characteristics include a maximum on-state resistance of 430 mΩ at VGS = 10 V and ID = 1.75 A. It is housed in a surface-mount SOT223 plastic package designed for efficient heat transfer.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchMOS™ technology for enhanced performance
- Designed for fast switching applications
- Surface mount construction in a plastic package
Single FETs, MOSFETs Applications
- Primary side switch in DC to DC converters
- High speed driver circuits
- Fast general purpose switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust N-channel switching with low on-state resistance. Ensure thermal management aligns with the specified junction temperature limits and power dissipation ratings. Confirm that gate drive voltages remain within the absolute maximum ratings to prevent damage during operation.
Single FETs, MOSFETs Part Context
This device belongs to the family of N-channel TrenchMOS transistors manufactured by Philips Semiconductors, now NXP Semiconductors. The product data sheet was initially released in October 2001. It represents an early implementation of TrenchMOS technology for surface-mount applications, providing a compact solution for power switching needs.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement lists or cross-reference databases for verified substitutes. No specific substitute part numbers are documented in the provided source material.
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