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PJD55P03E-AU_L2_006A1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 30V P-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PJD55P03E-AU_L2_006A1
- Description：30V P-CHANNEL ENHANCEMENT MODE M
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：12.4A (Ta), 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1610 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 44W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for PJD55P03E-AU_L2_006A1
Single FETs, MOSFETs Overview
The PJD55P03E-AU is a 30V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes TO-252AA packaging and operates within a junction temperature range of -55°C to +175°C. The device supports a continuous drain current of -48A at 25°C and withstands a pulsed drain current of -143A. Key electrical parameters include a maximum on-state resistance of 12.1mΩ at VGS=-10V and 20mΩ at VGS=-4.5V. Gate charge is typically 34nC, with turn-on delay time at 7ns and turn-off delay time at 51ns.
Single FETs, MOSFETs Feature Summary
- Qualified for automotive applications under AEC-Q101 standards
- Validated for 100% Unclamped Inductive Switching (UIS) reliability
- Compliant with EU RoHS 2.0 directives using lead-free materials
Single FETs, MOSFETs Applications
- Automotive power management circuits
- General-purpose load switching
- DC-DC converter topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm that the requested revision matches the latest datasheet release date. Ensure compliance with automotive qualification requirements if deploying in vehicle systems. Validate thermal mounting surface conditions against specified RθJA values.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage P-Channel MOSFET with high current capability is required. The TO-252AA package provides robust thermal dissipation for power applications. Consider the specific gate threshold voltage characteristics for logic-level driving compatibility. Evaluate the figure-of-merit based on the trade-off between on-resistance and total gate charge.
Single FETs, MOSFETs Part Context
This part belongs to the PJD series of enhancement mode MOSFETs designed for power switching applications. It represents Panjit's silicon-based discrete semiconductor solutions targeting both industrial and automotive sectors. The TO-252AA form factor allows for efficient surface-mount integration into printed circuit boards requiring moderate power handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference pinout configurations and thermal resistance values before implementation.
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