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PJF6NA70_T0_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 700V N-CHANNEL MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PJF6NA70_T0_00001
- Description：700V N-CHANNEL MOSFET
- Series：-
- Mfr：Panjit International Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.7Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：831 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for PJF6NA70_T0_00001
Single FETs, MOSFETs Overview
The PJF6NA70_T0_00001 is a single N-Channel MOSFET manufactured by Panjit International Inc. It features a 700V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 6A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.7 Ohms at Vgs = 10V and Id = 3A. It utilizes the ITO-220AB through-hole package, providing a maximum power dissipation of 45W at case temperature. The component operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 700V drain-source breakdown rating for robust circuit protection
- Through-hole construction in ITO-220AB package suitable for high-power thermal management
- Enhancement mode operation optimized for switching applications
Single FETs, MOSFETs Applications
- High-voltage power supply circuits
- Industrial motor control systems
- General-purpose switching applications requiring through-hole mounting
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix T0_00001 against official Panjit documentation to confirm pinout and marking details. Ensure the procurement channel provides valid RoHS compliance certificates. Confirm that the ITO-220AB package dimensions match the target PCB footprint requirements before finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component when a through-hole N-Channel MOSFET with 700V blocking capability is required. The 1.7 Ohm Rds(on) at 6A indicates moderate conduction losses; evaluate thermal resistance if operating near the 45W limit. Compare against surface-mount alternatives like PJD6NA70 if board space constraints dictate SMD packaging.
Single FETs, MOSFETs Part Context
This part belongs to Panjit's high-voltage N-Channel MOSFET portfolio. It shares electrical characteristics with other 700V series devices but differs in physical packaging. The ITO-220AB form factor distinguishes it from surface-mount variants, targeting applications where mechanical stability and heat sinking via the tab are prioritized over miniaturization.
Single FETs, MOSFETs Replacement Considerations
The PJF4NA70 is a documented alternative within the same manufacturer's lineup offering similar 700V specifications. Verify package compatibility as cross-replacements may differ in thermal or mechanical properties.
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