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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 7A 8SOP
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 6A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 6A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.8nC @ 4.5V, 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：429pF @ 25V, 846pF @ 15V
- Power - Max：1.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The PJL9606_R2_00001 is a P-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a drain-source voltage (Vdss) of -60 V and a continuous drain current (Id) of -7.4 A at 25°C ambient temperature, with a case current rating of -48 A. The device exhibits a maximum on-resistance (Rds(on)) of 17 mΩ at Vgs = -10 V and Id = -20 A. Gate charge (Qg) is 13.5 nC at Vgs = -4.5 V, with an input capacitance (Ciss) of 1574 pF at Vds = -25 V. Power dissipation is rated at 2 W (Ta) and 83 W (Tc). The component operates within a junction temperature range of -55°C to 150°C and is housed in an 8-PowerVDFN package.
Feature Summary
- P-channel enhancement mode construction for high-side switching applications
- Low on-resistance optimized for conduction loss reduction
- Advanced trench process technology for improved thermal performance
- Automotive-grade reliability compliant with AEC-Q101 standards
Applications
- Automotive power distribution systems
- DC-DC converter topologies
- Motor control circuits
- Load switch applications in infotainment and body electronics
Procurement Notes
Verify the specific suffix R2_00001 against official Panjit documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with RoHS3 directives and check for any recent production change notices that may affect lead times or material composition prior to final procurement authorization.
Selection Notes
Select this component when a -60 V P-channel MOSFET with low gate charge and high current capability is required. Compare Rds(on) values at specific Vgs levels against circuit requirements. Verify thermal resistance parameters for the DFN5060-8 package to ensure adequate heat dissipation in the target application environment.
Part Context
This part belongs to Panjit's automotive-grade N-channel and P-channel MOSFET series designed for robust performance in demanding environments. It utilizes Shielded-Gate Trench (SGT) technology to achieve a superior figure-of-merit, balancing low on-resistance with fast switching speeds for efficient power management solutions.
Replacement Considerations
The PJQ5466A1-AU_R2_000A1 is listed as a parameter-equivalent substitute. Verify pinout compatibility and exact electrical tolerances before substitution.
