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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.6A 6DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
- Rds On (Max) @ Id, Vgs：600mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：51pF @ 10V
- Power - Max：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN
- Supplier Device Package：DFN1010-6L
- Grade：-
- Qualification：-
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Overview
The PJQ1821 is a 20V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in a DFN1010-6L package. The device features a drain-source voltage of -20V, a continuous drain current of -600mA, and a maximum power dissipation of 400mW at 25°C. Electrical characteristics include a gate threshold voltage ranging from -0.3V to -1V and an on-state resistance between 470mΩ and 1600mΩ depending on the gate-source voltage. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- Specially designed for switch load and PWM applications
- Integrated ESD protection capabilities
- Compliant with EU RoHS 2.0 standards using green molding compound
Applications
- Switch load circuits
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific ordering suffix R1_00001 against official documentation to confirm packaging details. The datasheet indicates this part number corresponds to a 5K pcs quantity on a 7-inch reel. Ensure compliance with Halogen-free requirements as specified in the version column. Confirm that the application does not involve life-saving or high-reliability equipment due to explicit manufacturer disclaimers.
Selection Notes
Select this component for low-voltage P-channel switching tasks requiring a compact footprint. The DFN1010-6L package suits space-constrained designs. Evaluate the thermal resistance of 312°C/W and the 400mW power dissipation limit to ensure adequate heat management. Verify that the required gate drive voltages align with the specified threshold and on-resistance curves for efficient operation.
Part Context
This component belongs to the P-Channel Enhancement Mode MOSFET category produced by Panjit International Inc. It is engineered for general-purpose switching roles where small form factors are necessary. The device integrates body diode functionality and is built on silicon technology. It represents a standard discrete semiconductor solution for consumer electronics and portable devices.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers must consult official distributor databases or manufacturer cross-reference tools to identify compatible alternatives with matching electrical parameters and package dimensions.
