PJQ2815_R1_00001

$0.89

Description：MOSFET 2P-CH 20V 4.2A 6DFN
Series：-

SKU:c3dabacd7495 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 4.2A 6DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Rds On (Max) @ Id, Vgs：52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：907pF @ 10V
Power - Max：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-VDFN Exposed Pad
Supplier Device Package：DFN2020-6L
Grade：-
Qualification：-

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PJQ2815_R1_00001

Overview

The PJQ2815 is a 20V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes an advanced trench process technology and is housed in a DFN2020-6L package. The device supports a continuous drain current of -4.2A and a pulsed drain current of -16.8A. Key electrical parameters include a maximum on-resistance of 52mΩ at VGS=-4.5V, a gate threshold voltage range of -0.35V to -0.9V, and a total gate charge of 24nC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 1.5W at 25°C ambient.

Feature Summary

Advanced Trench Process Technology for optimized performance
Specially designed for switch load and PWM applications
ESD protected structure
Lead-free construction compliant with EU RoHS 2011/65/EU directive

Applications

Switch load circuits
PWM (Pulse Width Modulation) applications

Procurement Notes

Verify the specific ordering suffix and packing quantity against the manufacturer's latest documentation before procurement. Confirm that the component meets all required environmental standards, such as halogen-free molding compound compliance per IEC61249 Std., and ensure the marking code matches the expected identifier for quality assurance purposes.

Selection Notes

Select this component when a low-voltage P-Channel MOSFET with high efficiency in small packages is required. Consider the thermal resistance of 83.3°C/W and the derating factor above 25°C for heat management. Ensure the driving circuit can provide sufficient gate voltage swing relative to the specified threshold voltage ranges for reliable switching operation.

Part Context

This part belongs to the Panjit MOSFET product line, specifically utilizing the DFN2020-6L surface-mount package. It is designed for general-purpose switching applications where space constraints and thermal performance are critical factors. The device is marked with '815' for identification.