PJQ4602_R1_00001

$0.25

Description：MOSFET N/P-CH 30V 6.4A 8DFN
Series：-

SKU:1483d417039a Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 6.4A 8DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA, 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：343pF @ 15V, 870pF @ 15V
Power - Max：2W (Ta), 17.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：DFN3030B-8
Grade：-
Qualification：-

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PJQ4602_R1_00001

Overview

The PJQ4602_R1_00001 is a complementary enhancement mode MOSFET manufactured by Panjit International Inc. It integrates an N-channel and P-channel device within a single DFN3030B-8L package. The N-channel section provides a drain-source voltage of 30V, continuous current of 18.5A, and on-resistance of 28mΩ. The P-channel section offers -30V breakdown, -18A continuous current, and 31mΩ resistance. Both channels operate with a maximum junction temperature of 150°C.

Feature Summary

Complementary N-channel and P-channel integration in a compact surface-mount package
High switching speed with low gate charge and reverse transfer capacitance
Improved dv/dt capability for enhanced dynamic performance
Lead-free construction compliant with EU RoHS 2.0 standards

Applications

Synchronous rectification circuits
Low-side and high-side power switching applications
DC-DC converter topologies requiring complementary drive signals

Procurement Notes

Verify the specific ordering suffix to confirm packaging details. Confirm that the component meets all required environmental compliance standards for the target application. Ensure the design accommodates the thermal characteristics specified in the datasheet for reliable operation under load conditions.

Selection Notes

Select this component when a matched pair of N-channel and P-channel MOSFETs is required in a minimal footprint. Evaluate the thermal resistance values against the expected power dissipation. Verify that the gate threshold voltages align with the available control logic levels for proper switching.

Part Context

This part belongs to the Panjit complementary MOSFET family designed for efficient power management. It utilizes advanced trench technology to achieve low on-resistance. The DFN3030B-8L package provides robust thermal performance and mechanical stability for automated assembly processes.

Replacement Considerations

Direct replacements must match the 30V rating, DFN3030B-8L package, and complementary configuration. Verify pinout compatibility and electrical parameters such as RDS(on) and Qg before substitution.