PJQ4848P-AU_R2_000A1

$0.98

Description：MOSFET 2N-CH 40V 9A 8DFN
Series：-

SKU:09eb1a797fcb Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 9A 8DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1040pF @ 20V
Power - Max：2.4W (Ta), 39.6W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerWDFN
Supplier Device Package：DFN3333B-8
Grade：Automotive
Qualification：AEC-Q101

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PJQ4848P-AU_R2_000A1

Overview

The PJQ4848P-AU_R2_000A1 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN3333B-8L package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 9A at ambient temperature and 37A at case temperature, with a pulsed current rating of 120A. On-resistance is specified as less than 15mΩ at VGS=10V and ID=8A, and less than 20mΩ at VGS=4.5V and ID=6A. Total gate charge is typically 10nC. The component is AEC-Q101 qualified and functions within a junction temperature range of -55°C to +175°C.

Feature Summary

Advanced trench process technology for high-density cell design
Dual N-channel configuration in a compact surface-mount package
Qualified for automotive applications under AEC-Q101 standards

Applications

Power management circuits requiring low on-resistance
Automotive electronic systems
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested part number matches the exact electrical specifications required for the target application. Ensure compliance with RoHS 2.0 and IEC 61249 green molding compound standards during procurement validation.

Selection Notes

Select this component when a dual N-channel MOSFET with 40V capability is required. Consider the thermal resistance characteristics and package limitations for current handling. Verify that the gate drive voltage aligns with the specified RDS(on) conditions for optimal performance.

Part Context

This component belongs to the PJQ4848P-AU series of dual N-channel enhancement mode MOSFETs. It utilizes silicon trench technology to achieve low on-resistance. The product line is designed for automotive and industrial applications requiring reliable switching performance in compact form factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for potential alternatives if direct replacement is necessary.