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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 9A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 37A (Tc)
- Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1040pF @ 20V
- Power - Max：2W (Ta), 33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：DFN3333B-8
- Grade：-
- Qualification：-
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Overview
The PJQ4848P_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN3333B-8L package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 37A at TC=25°C and handles a pulsed drain current of 120A. Key electrical parameters include a maximum on-resistance of 15mΩ at VGS=10V and 20mΩ at VGS=4.5V. The component complies with EU RoHS 2.0 standards, utilizes green molding compound per IEC 61249, and offers an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Advanced trench process technology for high-density cell design
- Ultralow on-resistance characteristics
- Lead-free construction compliant with EU RoHS 2.0
- Green molding compound meeting IEC 61249 standards
Applications
- Power management circuits
- DC-DC converters
- Motor control applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the requested part number matches the exact marking version required for the assembly process. Ensure compliance with environmental directives relevant to the target market before finalizing procurement orders.
Selection Notes
Select this component for designs requiring low conduction losses in compact footprints. Evaluate thermal resistance values relative to the expected ambient temperature and heat dissipation capabilities of the PCB layout. Verify gate charge requirements against the driving circuit's switching speed limitations.
Part Context
This component belongs to the PJQ4848P series of dual N-channel MOSFETs. It shares the same core electrical specifications as other variants within the family but differs in packaging configuration and reel quantity. The R2_00001 suffix indicates a specific tape and reel packing format.
Replacement Considerations
Direct substitutes must match the 40V rating, dual N-channel topology, and DFN3333B-8L footprint. Verify pinout compatibility and thermal performance metrics before implementation.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current is 120A at a case temperature of 25°C.
Is the device qualified for automotive applications?
The datasheet does not list AEC-Q101 qualification for this specific model.
What is the typical gate threshold voltage?
The typical gate threshold voltage is 1.75V when measured at VDS=VGS and ID=250uA.
