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PJQ5445_R2_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 40V P-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PJQ5445_R2_00001
- Description：40V P-CHANNEL ENHANCEMENT MODE M
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2030 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5060-8
- Package / Case：8-PowerVDFN
Single FETs, MOSFETs datasheet and documents for PJQ5445_R2_00001
Single FETs, MOSFETs Overview
The PJQ5445_R2_00001 is a 40V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes standard trench technology and is housed in a DFN5060-8L package. The device supports a continuous drain current of -45A at TC=25°C and offers a maximum on-resistance (RDS(on)) of 17mΩ at VGS=-10V and ID=-15A, or 25mΩ at VGS=-4.5V and ID=-10A. Key electrical parameters include a gate threshold voltage range of -1V to -2.5V, a total gate charge of 19nC, and a power dissipation rating of 63W at TC=25°C.
Single FETs, MOSFETs Feature Summary
- Standard trench technology for low on-resistance
- High switching speed with improved dv/dt capability
- Low gate charge and reverse transfer capacitance
Single FETs, MOSFETs Applications
- DC/DC converters
- Motor control circuits
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix R2_00001 against the manufacturer's latest documentation to confirm packaging details and compliance status. Ensure that the DFN5060-8L footprint matches your PCB layout requirements. Confirm thermal resistance values align with your system's heat dissipation capabilities before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 40V P-Channel MOSFET with high current handling is required. The DFN5060-8L package provides efficient thermal performance for surface mount applications. Consider the low gate charge for driving efficiency in high-frequency switching environments. Verify that the -40V breakdown voltage meets the circuit's maximum operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to Panjit's P-Channel Enhancement Mode MOSFET lineup, designed for general-purpose power switching applications. The DFN5060-8L package is optimized for space-constrained designs while maintaining robust thermal characteristics. It serves as a solution for low-side or high-side switching in various electronic equipment.
Single FETs, MOSFETs Replacement Considerations
Consult official Panjit documentation for verified substitute part numbers. Cross-reference pinouts, voltage ratings, and thermal specifications carefully when evaluating alternatives.
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