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PJQ5462A_R2_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 60V N-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.
The PJQ5462A_R2_00001 is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes silicon technology and is housed in a DFN5060-8L surface-mount package. The device supports a continuous drain current of 42A at TC=25°C and features a maximum on-resistance of 12mΩ at VGS=10V, ID=20A. Key electrical parameters include a gate threshold voltage of 2.5V maximum, total gate charge of 40nC, and an operating junction temperature range from -55°C to 150°C.
Verify the specific ordering suffix R2_00001 against official Panjit documentation to confirm packaging details and versioning. Ensure that design requirements align with the specified thermal characteristics and maximum ratings provided in the datasheet before finalizing procurement orders.
Select this component when a 60V rating and low on-resistance are required for high-current applications. Consider the DFN5060-8L package dimensions and thermal resistance values for PCB layout planning. Confirm that the gate drive voltage meets the minimum requirements for optimal RDS(on) performance.
This part belongs to the PJQ5462 series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series is designed for general-purpose switching applications requiring robust performance within a compact surface-mount footprint.
Consult official manufacturer substitution lists or cross-reference databases for verified equivalent parts. Ensure any replacement matches the voltage, current, and package specifications exactly.
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