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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 7A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
- Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.8nC @ 4.5V, 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：429pF @ 25V, 846pF @ 15V
- Power - Max：1.7W (Ta), 21W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：-
- Qualification：-
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FAQ
Is the PJQ5606_R2_00001 available for new designs?
No, this component is designated as NRND (Not Recommended for New Designs) by Panjit International Inc.
What is the maximum junction temperature for this MOSFET?
The maximum operating junction temperature is +175°C.
