PJQ5839E-AU_R2_002A1

$1.87

Description：MOSFET 2P-CH 30V 9A 8DFN
Series：-

SKU:f72bde4c3636 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 9A 8DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs：19.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1012pF @ 25V
Power - Max：2.5W (Ta), 30W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：DFN5060B-8
Grade：Automotive
Qualification：AEC-Q101

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PJQ5839E-AU_R2_002A1

Overview

The PJQ5839E-AU_R2_002A1 is a single P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes silicon technology and is housed in a TO-252AA-3 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 31 A. Its maximum on-resistance (Rds On) is 30.7 mOhms, with a gate charge (Qg) of 22 nC. The component supports a gate-source voltage range of ±25 V and operates within a temperature range of -55°C to +175°C. It has a power dissipation rating of 30 W and meets AEC-Q101 automotive qualification standards.

Feature Summary

Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in demanding environments.
Enhanced switching efficiency achieved through low gate charge characteristics suitable for high-frequency applications.
High thermal stability allowing operation at junction temperatures up to 175°C.

Applications

Automotive power management circuits requiring AEC-Q101 compliance
Low-side or high-side load switching applications
DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to ensure correct packaging configuration. Confirm that the requested part number matches the exact electrical specifications required for the target design. Cross-reference the manufacturer's latest datasheet to validate any recent product change notifications or parameter updates before finalizing procurement orders.

Selection Notes

Select this component when a 30V P-Channel MOSFET with a 31A current rating is required in a TO-252AA-3 package. Ensure the application demands an Rds On of approximately 30.7 mOhms at the specified drive conditions. Verify that the system can accommodate the 22 nC gate charge for driver compatibility. Confirm that the operating environment falls within the specified -55°C to +175°C temperature range.

Part Context

This part belongs to the PJQ series of automotive-grade MOSFETs from Panjit. The series focuses on providing reliable power switching solutions for automotive electronics. The PJQ5839E variant specifically addresses the need for P-Channel devices in 30V systems, offering a balance of current handling and low on-resistance in a compact surface-mount form factor.

Replacement Considerations

Consult official Panjit substitution guides for verified alternatives. Do not assume pin-compatible substitutes from other manufacturers without verifying electrical parameters and package dimensions against the original datasheet.