PJQ5844-AU_R2_000A1

$1.33

Description：MOSFET 2N-CH 40V 10A 8DFN
Series：-

SKU:8880be243231 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 10A 8DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs：8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1759pF @ 25V
Power - Max：2W (Ta), 38.5W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：DFN5060B-8
Grade：Automotive
Qualification：AEC-Q101

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PJQ5844-AU_R2_000A1

Overview

The PJQ5844-AU_R2_000A1 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN5060B-8L package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 45A at TC=25°C and 10A at TA=25°C, with a maximum power dissipation of 38.5W at TC=25°C. Key electrical parameters include an on-state resistance (RDS(on)) of less than 8mΩ at VGS=10V and ID=15A, and less than 10.5mΩ at VGS=4.5V and ID=8A. The component is AEC-Q101 qualified and complies with EU RoHS 2.0 standards.

Feature Summary

Dual N-channel configuration for efficient circuit integration
High switching speed with improved dv/dt capability
Low reverse transfer capacitance to minimize parasitic effects
Lead-free construction using green molding compound per IEC 61249 standard

Applications

Automotive electronic systems requiring AEC-Q101 qualification
Power management circuits utilizing low on-resistance characteristics
High-frequency switching applications benefiting from fast turn-on and turn-off times

Procurement Notes

Verify the specific ordering suffix R2_000A1 against official Panjit documentation to confirm packaging details and marking codes. Ensure that the procurement channel provides valid traceability data, as lot numbers are required for tracking purposes. Confirm compliance with environmental directives such as EU RoHS 2.0 before finalizing orders.

Selection Notes

Select this component when a dual N-channel MOSFET with a 40V rating and high current capacity is required. The DFN5060B-8L package offers a compact footprint suitable for space-constrained designs. Evaluate thermal performance based on the junction-to-case resistance of 3.9°C/W and ensure adequate heat sinking if operating near the maximum power dissipation limits.

Part Context

This part belongs to the PJQ5844 series of automotive-grade MOSFETs produced by Panjit International Inc. The AU suffix typically denotes specific manufacturing or material attributes, while the R2_000A1 suffix indicates the reel packaging format containing 3000 pieces. The device is designed to meet rigorous automotive reliability standards.

Replacement Considerations

Direct substitutes must match the 40V rating, dual N-channel topology, and DFN5060B-8L package dimensions. Verify that alternative components meet the same AEC-Q101 qualification and have comparable RDS(on) values at VGS=10V and VGS=4.5V to maintain circuit performance.