PJQ5844_R2_00001

$1.23

Description：MOSFET 2N-CH 40V 10A 8DFN
Series：-

SKU:f74eb8ff9705 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 10A 8DFN
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs：8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1759pF @ 25V
Power - Max：1.7W (Ta), 32W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：DFN5060B-8
Grade：-
Qualification：-

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PJQ5844_R2_00001

Overview

The PJQ5844_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN5060B-8L package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 45A at TC=25°C and handles a pulsed drain current of 180A. Key electrical parameters include an on-state resistance (RDS(on)) of 8mΩ max at VGS=10V/ID=15A, and 10.5mΩ max at VGS=4.5V/ID=8A. Gate threshold voltage ranges from 1V to 2.5V. Total gate charge is typically 17nC. Thermal characteristics specify a junction-to-case resistance of 3.9°C/W and a junction-to-ambient resistance of 73.5°C/W.

Feature Summary

Dual N-channel configuration in a compact DFN5060B-8L surface-mount package
Low on-state resistance optimized for high efficiency power switching applications
High switching speed combined with improved dv/dt capability
Lead-free construction compliant with EU RoHS 2.0 standards

Applications

DC-DC converter circuits requiring low profile packaging
Power management systems utilizing synchronous rectification
Load switching applications in portable electronic devices

Procurement Notes

Verify the specific ordering suffix R2_00001 against official documentation to confirm packing details. The component is supplied in reels containing 3000 pieces per 13-inch reel. Ensure compliance with moisture sensitivity levels during storage and handling procedures before soldering.

Selection Notes

Select this component when a dual N-channel topology is required within a DFN5060B-8L footprint. Evaluate thermal performance based on the specified junction-to-ambient resistance of 73.5°C/W for your specific board layout. Confirm that the 40V breakdown voltage and 45A current ratings align with the maximum operational stresses of the target circuit design.

Part Context

This part belongs to the PJQ series of medium voltage MOSFETs produced by Panjit International Inc. The series utilizes silicon technology to deliver enhanced performance in power switching environments. The PJQ5844 variant specifically targets applications demanding low conduction losses and fast dynamic response in a small form factor.