PJQ5848_R2_00001

Overview

The PJQ5848_R2_00001 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN5060B-8L package and operates with a drain-source voltage of 40V. The device supports a continuous drain current of 30A at 25°C case temperature, with a maximum pulsed drain current of 100A. Key electrical parameters include an on-state resistance of 12mΩ max at VGS=10V and 16mΩ max at VGS=4.5V. Gate threshold voltage ranges from 1V to 2.5V. Thermal characteristics specify a junction-to-case resistance of 6.3°C/W and a junction-to-ambient resistance of 73.5°C/W. The component is rated for operating temperatures between -55°C and +150°C.

Feature Summary

• Dual N-channel configuration in a compact DFN5060B-8L package
• High switching speed with low reverse transfer capacitance
• Improved dv/dt capability for robust performance
• Lead-free construction compliant with EU RoHS 2.0 standards

Applications

• DC-DC converter circuits
• Power management systems
• Motor control applications

Procurement Notes

Verify the specific ordering suffix R2_00001 against official documentation to confirm packaging details. The datasheet indicates this variant is supplied in 3000-piece reels within a 13-inch format. Ensure compliance with halogen-free requirements as specified in the manufacturer's marking version. Confirm availability status directly with authorized distributors or the manufacturer before initiating orders.

Selection Notes

Select this component for designs requiring a 40V dual N-channel MOSFET with high current handling capabilities. Evaluate thermal constraints carefully, as power dissipation drops significantly from 20W at 25°C case temperature to 1.1W at 70°C ambient temperature. Consider the 12mΩ on-resistance at 10V gate drive for efficiency optimization in low-voltage power stages.

Part Context

This part belongs to Panjit's medium voltage MOSFET portfolio, designed for general-purpose switching applications. The DFN5060B-8L package provides efficient thermal dissipation through exposed pad mounting. The device utilizes silicon technology optimized for low on-resistance and fast switching speeds, suitable for modern power electronics where space and efficiency are critical.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 40V rating, 30A current capacity, and DFN5060B-8L footprint. Verify that alternative components meet the same thermal resistance and switching speed requirements for direct integration without circuit modification.

FAQ

What is the maximum pulsed drain current for the PJQ5848?

The maximum pulsed drain current (IDM) is 100A when measured at a case temperature of 25°C.

How does the on-state resistance vary with gate voltage?

The on-state resistance is specified as a maximum of 12mΩ at VGS=10V and ID=12A, and increases to a maximum of 16mΩ at VGS=4.5V and ID=8A.

Is the PJQ5848 suitable for automotive medical applications?

No. The manufacturer explicitly states that these products are not designed or authorized for equipment requiring high reliability, life-saving instruments, or medical devices.