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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 5A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta), 14A (Tc)
- Rds On (Max) @ Id, Vgs：33mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：425pF @ 25V
- Power - Max：2W (Ta), 14.4W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PJQ5850-AU_R2_000A1 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN5060B-8L package and operates with a drain-source voltage of 40V and a continuous drain current of 14A at TC=25°C. The device achieves an on-state resistance (RDS(on)) of less than 33mΩ at VGS=10V and ID=8A, or less than 42mΩ at VGS=4.5V and ID=4A. Key electrical parameters include a gate threshold voltage of 1.2V to 2.5V, total gate charge of 4.4nC, and input capacitance of 425pF. It supports an operating junction temperature range from -55°C to +175°C and is AEC-Q101 qualified.
Feature Summary
- Dual N-channel configuration for simplified circuit design
- Low on-state resistance to minimize conduction losses
- High switching speed with improved dv/dt capability
- Qualified for automotive applications under AEC-Q101 standards
Applications
- Automotive power management systems
- Battery-powered equipment
- Primary 12V/24V system protection
Procurement Notes
Verify the component against the official Panjit datasheet PJQ5850-AU.pdf to confirm specifications. Ensure the ordering suffix matches the required packing code and halogen-free status. Confirm that the supplier provides traceability documentation consistent with the manufacturer's lot number tracking requirements.
Selection Notes
Select this component when a compact dual N-channel solution is required for 40V automotive environments. Evaluate thermal performance based on the specified RθJA of 73.5°C/W for ambient conditions. Consider the low gate charge and high switching speed for efficient power conversion applications requiring minimal drive power.
Part Context
This part belongs to the PJQ5850 series of automotive-grade MOSFETs. It utilizes silicon technology and complies with EU RoHS 2.0 directives. The device is designed to offer high avalanche ruggedness and reliability in space-constrained automotive electronics.
Replacement Considerations
Direct substitutes must match the 40V rating, dual N-channel topology, and DFN5060B-8L footprint. Verify that any alternative component meets AEC-Q101 qualification and maintains comparable RDS(on) and thermal characteristics.
