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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 40A (Tc)
- Rds On (Max) @ Id, Vgs：17mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1574pF @ 25V
- Power - Max：2W (Ta), 68.2W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PJQ5866A-AU_R2_000A1 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a DFN5060B-8L package and operates with a drain-source voltage of 60V. The device supports a continuous drain current of 40A at TC=25°C and 7A at TA=25°C, with a maximum power dissipation of 68.2W at TC=25°C. Electrical characteristics include a gate threshold voltage ranging from 1V to 2.5V and a total gate charge of 13.5nC at VGS=4.5V. The component complies with AEC-Q101 standards and EU RoHS 2.0 regulations.
Feature Summary
- Dual N-channel configuration housed in a compact DFN5060B-8L surface-mount package
- High switching speed supported by low reverse transfer capacitance and optimized dynamic parameters
- Enhanced avalanche energy capability for robust performance under transient conditions
- Qualified for automotive applications through AEC-Q101 certification
Applications
- Automotive electronic systems requiring high reliability and thermal stability
- Power management circuits utilizing synchronous rectification topologies
- DC-DC converter designs operating within the specified voltage and current limits
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and marking codes. Ensure compliance with moisture sensitivity levels and storage requirements prior to assembly. Confirm that the requested part number matches the exact electrical specifications required for the target application design.
Selection Notes
Evaluate the thermal resistance values relative to the intended heat sinking strategy to ensure junction temperatures remain within safe operating limits. Compare the on-state resistance at the specific gate drive voltage used in the circuit against the datasheet maximums. Consider the pulsed drain current ratings if the application involves significant inductive loads or startup surges.
Part Context
This component belongs to the PJQ series of medium voltage MOSFETs designed for efficient power switching. The dual configuration allows for space-saving implementations in bridge and half-bridge circuits. The DFN5060B-8L package provides improved thermal performance compared to traditional plastic packages while maintaining a small footprint suitable for dense PCB layouts.
Replacement Considerations
Direct substitutes must match the 60V rating, dual N-channel topology, and DFN5060B-8L package dimensions. Verify that alternative components meet or exceed the 17mΩ on-resistance specification at 10V gate drive to maintain equivalent conduction losses.
