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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 10.6A 8DFN
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：10.6A (Ta), 37A (Tc)
- Rds On (Max) @ Id, Vgs：12.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：778pF @ 25V
- Power - Max：2.5W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：DFN5060B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PJQ5948V-AU_R2_002A1 is a dual N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a 40V drain-source voltage rating and operates within a junction temperature range of -55°C to +175°C. The device provides a continuous drain current of 10.5A at ambient temperature and 35A at case temperature, with a maximum on-resistance of 13.4mΩ at 10V gate drive. Key electrical parameters include a gate charge of 9.5nC and an input capacitance of 673pF. Packaged in an 8-PowerTDFN (DFN5060B-8) surface-mount format, it holds AEC-Q101 automotive qualification.
Feature Summary
- Dual N-channel configuration for integrated circuit design
- Automotive-grade reliability certified under AEC-Q101 standards
- Low on-resistance for efficient power switching
- Enhanced thermal performance via DFN5060B-8 package
Applications
- Automotive power distribution systems
- Load switch applications in vehicle electronics
- DC-DC converter output stages
- Motor control circuits
Procurement Notes
Verify the exact suffix against official documentation, as distributor listings show variations such as R2_002A1. Confirm the component status, as some sources indicate NRND (Not Recommended for New Designs). Ensure the selected packaging matches production requirements, typically available in reels or cut tape formats from authorized channels.
Selection Notes
Select this component for designs requiring dual N-channel isolation in a compact footprint. The 40V rating suits low-voltage automotive buses. Evaluate thermal management capabilities given the 32W case power dissipation limit. Verify gate drive compatibility with the 9.5nC charge requirement to ensure adequate switching speed without excessive driver loss.
Part Context
This part belongs to the PJQ series of automotive MOSFETs from Panjit. It shares the DFN5060B-8 package form factor with other high-current devices in the lineup but differs in channel count and voltage ratings. The V designation typically indicates specific process or parameter variants within the broader PJQ family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult manufacturer cross-reference tools or datasheets for equivalent dual N-channel 40V MOSFETs with compatible pinouts and thermal characteristics.
