PJS6601_S2_00001

$0.11

Description：MOSFET N/P-CH 20V 4.1A SOT23-6
Series：-

SKU:21fcdca7ed2a Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 4.1A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta), 3.1A (Ta)
Rds On (Max) @ Id, Vgs：56mOhm @ 4.1A, 4.5V, 100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.6nC @ 4.5V, 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：350pF @ 10V, 416pF @ 10V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

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PJS6601_S2_00001

Overview

The PJS6601 is a complementary enhancement mode MOSFET manufactured by Panjit International Inc. in an SOT-23 6L package. It integrates N-channel and P-channel devices with drain-source voltages of +20V and -20V, respectively. The N-channel unit supports a continuous drain current of 4.1A, while the P-channel unit handles -3.1A. Maximum power dissipation is rated at 1.25W at 25°C ambient temperature. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench process technology for optimized performance
Specially designed for switch load and PWM applications
Lead-free construction compliant with EU RoHS 2.0 standards
Green molding compound meeting IEC 61249 requirements

Applications

Switch load control circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the requested variant matches the exact electrical characteristics and marking code required for the design. Ensure compliance with the manufacturer's terms regarding product usage and liability limitations.

Selection Notes

Select this component for low-voltage switching applications requiring complementary N-P channel integration. Evaluate thermal resistance and derating curves for high-power scenarios. Verify gate threshold voltage compatibility with the driving logic levels to ensure reliable switching operation under expected load conditions.

Part Context

This part belongs to the PJS6601 series of complementary MOSFETs from Panjit International Inc. It is housed in an SOT-23 6L surface-mount package. The device is marked with SC1. Standard packing options include 3K pieces on a 7-inch reel or 10K pieces on a 13-inch reel.