PJS6602_S2_00001

$0.12

Description：MOSFET N/P-CH 20V 5.2A SOT23-6
Series：-

SKU:81e4a4fe8ef3 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 5.2A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.2A (Ta), 3.4A (Ta)
Rds On (Max) @ Id, Vgs：36mOhm @ 5.2A, 4.5V, 82mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.1nC @ 4.5V, 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：396pF @ 10V, 522pF @ 10V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

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PJS6602_S2_00001

Overview

The PJS6602_S2_00001 is a complementary enhancement mode MOSFET manufactured by Panjit International Inc. in an SOT-23 6L package. The N-channel device supports a drain-source voltage of 20V and continuous current of 5.2A, with a maximum on-resistance of 36mΩ at VGS=4.5V. The P-channel counterpart handles -20V and -3.4A, featuring a maximum on-resistance of 82mΩ at VGS=-4.5V. Both channels operate within a junction temperature range of -55°C to 150°C and are designed for switch load and PWM applications.

Feature Summary

Advanced Trench Process Technology
Specially Designed for Switch Load and PWM Applications
Lead-free Construction Compliant with EU RoHS 2.0
Green Molding Compound Adhering to IEC 61249 Standard

Applications

Switch Load Control
PWM Application Circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The _S2 variant indicates a 10K pcs / 13” reel configuration. Ensure compliance with Halogen-free and RoHS requirements as stated in the datasheet. Confirm that the component lot number matches tracking requirements for quality assurance purposes.

Selection Notes

Select this component for low-voltage switching environments requiring complementary N-P channel pairs. Evaluate thermal resistance and power dissipation limits relative to ambient operating conditions. Verify gate drive voltages align with the specified thresholds for optimal on-state performance. Consider package limitations when determining maximum pulsed current capabilities.

Part Context

This part belongs to the PJS6602 series of 20V complementary enhancement mode MOSFETs. It shares core electrical characteristics with other variants in the family, such as the _S1 version, differing primarily in reel size and packing quantity. The SC2 marking identifies the specific manufacturing batch and revision.

Replacement Considerations

Direct substitutes must match the 20V rating, SOT-23 6L package, and complementary N/P structure. Verify pinout compatibility and thermal resistance values before implementation.