PJS6603_S2_00001

$0.66

Description：MOSFET N/P-CH 30V 4.4A SOT23-6
Series：-

SKU:d1bafa7fdc01 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 4.4A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.4A (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs：48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.8nC @ 10V, 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：235pF @ 15V, 396pF @ 15V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

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PJS6603_S2_00001

Overview

The PJS6603 is a complementary enhancement mode MOSFET manufactured by Panjit International Inc. in an SOT-23 6L package. It integrates N-channel and P-channel devices with drain-source voltages of +30V and -30V respectively. The N-channel unit supports a continuous drain current of 4.4A, while the P-channel unit handles -2.9A. Maximum power dissipation is rated at 1.25W at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench process technology for optimized performance
Specially designed for switch load and PWM applications
Lead-free construction compliant with EU RoHS 2.0 standards

Applications

Switch load control circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size or tape specifications. Confirm that the component meets required environmental standards like IEC 61249 green molding compound requirements before finalizing procurement orders.

Selection Notes

Select this component for low-voltage switching applications requiring complementary N-P channel pairs in a compact surface-mount footprint. Ensure thermal management accounts for the 100°C/W junction-to-ambient resistance rating when designing PCB layouts for optimal heat dissipation.

Part Context

This part belongs to the Panjit International Inc. discrete semiconductor portfolio, specifically categorized under voltage-rated MOSFETs. The SOT-23 6L package provides a compact solution suitable for space-constrained electronic designs requiring dual-channel switching capabilities.