PJS6806_S1_00001

$0.54

Description：MOSFET 2N-CH 30V 4A SOT23-6
Series：-

SKU:5ded2ddbb800 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 4A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Rds On (Max) @ Id, Vgs：48mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：235pF @ 15V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

Download product information

PJS6806_S1_00001

Overview

The PJS6806 is a 30V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in an SOT-23 6L package. The device supports a continuous drain current of 4A and a pulsed drain current of 16A. Key electrical parameters include a maximum on-state resistance of 48mΩ at VGS=10V and ID=4A, or 70mΩ at VGS=4.5V and ID=2.8A. The gate threshold voltage ranges from 1.0V to 2.1V. Total gate charge is typically 5.8nC. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced Trench Process Technology for optimized performance
Specially designed for switch load and PWM applications
Lead-free construction compliant with EU RoHS 2.0 directive
Green molding compound meeting IEC 61249 standard

Applications

Switch load circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Standard packing options include 3,000 pieces per 7-inch reel or 10,000 pieces per 13-inch reel. Confirm that the marking code matches the expected ST6 identifier for this component revision.

Selection Notes

Select this component when a 30V N-Channel MOSFET is required for low-voltage switching tasks. Ensure the drive voltage meets the requirements for the desired RDS(on) level, as resistance varies significantly between 10V and 4.5V gate-source conditions. Verify thermal management capabilities given the 1.25W power dissipation limit at 25°C ambient temperature.

Part Context

This part belongs to the PJS series of small-signal MOSFETs produced by Panjit International Inc. The manufacturer specializes in discrete semiconductors including MOSFETs, diodes, and transistors for automotive, industrial, and consumer electronics markets. The PJS6806 serves as a general-purpose switching element within their portfolio.

Replacement Considerations

Consult official datasheets for cross-reference candidates. Potential substitutes must match the 30V rating, SOT-23 6L package, and comparable RDS(on) specifications. Verify pinout compatibility before implementation.