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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 2.6A SOT23-6
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Rds On (Max) @ Id, Vgs：115mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：396pF @ 15V
- Power - Max：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6
- Grade：-
- Qualification：-
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Overview
The PJS6809_S1_00001 is a 30V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in an SOT-23 6L package. The device supports a continuous drain current of -2.6A and a pulsed drain current of -10.4A. Key electrical parameters include a maximum drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) limit of +20V, and a power dissipation of 1.25W at 25°C. On-state resistance (RDS(on)) is specified as less than 115mΩ at VGS=-10V/ID=-2.6A and less than 150mΩ at VGS=-4.5V/ID=-1.7A. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- Specially designed for switch load and PWM applications
- Compliant with EU RoHS 2.0 standards and IEC 61249 green molding compound
Applications
- Switch load control circuits
- Pulse Width Modulation (PWM) applications
- General purpose low-side or high-side switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. The datasheet lists distinct packing codes for different reel quantities; confirm that the selected variant matches the required unit count per reel for production integration.
Selection Notes
Select this component when a compact P-Channel MOSFET with a 30V rating is required. Ensure the application logic accounts for negative voltage polarities inherent to P-channel devices. Verify that the thermal management strategy accommodates the 100°C/W junction-to-ambient thermal resistance characteristic of the SOT-23 6L package under expected operating loads.
Part Context
This part belongs to the PJS6809 series from Panjit International Inc., representing a line of small-signal power MOSFETs. The series focuses on providing efficient switching capabilities in miniature surface-mount packages suitable for portable electronics and space-constrained circuit designs.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on pinout compatibility without verifying electrical parameter alignment.
