PJS6832_S2_00001

$0.48

Description：MOSFET 2N-CH 30V 1.6A SOT23-6
Series：-

SKU:ba63717e17ee Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 1.6A SOT23-6
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Rds On (Max) @ Id, Vgs：200mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：93pF @ 15V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6
Supplier Device Package：SOT-23-6
Grade：-
Qualification：-

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PJS6832_S2_00001

Overview

The PJS6832_S2_00001 is a 30V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and features ESD protection rated at 2kV HBM. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 30V, continuous drain current (ID) of 1.6A, and pulsed drain current (IDM) of 6.4A. On-state resistance (RDS(on)) is specified as a maximum of 200mΩ at VGS=4.5V/ID=1.6A, 270mΩ at VGS=2.5V/ID=1.1A, and 570mΩ at VGS=1.8V/ID=0.2A. Total gate charge (Qg) is typically 1.5nC under standard test conditions.

Feature Summary

Advanced Trench Process Technology for optimized switching performance
ESD Protection rated at 2KV HBM
Specially designed for switch load and PWM applications

Applications

Switch Load Applications
PWM Application

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The S2 variant corresponds to a 10K pcs / 13” reel packing code. Ensure compliance with RoHS 2.0 and IEC 61249 green molding compound standards during procurement. Confirm lot number availability for tracking purposes when placing orders.

Selection Notes

Select this component based on required voltage and current ratings relative to the application circuit. Evaluate RDS(on) specifications across different gate drive voltages (1.8V, 2.5V, 4.5V) to ensure compatibility with the control logic. Consider thermal resistance and power dissipation limits for proper heat management in the final design.

Part Context

This part belongs to the PJS6832 series of 30V N-Channel Enhancement Mode MOSFETs. The S2_00001 suffix specifically denotes the 10K pcs / 13” reel packing configuration. Other variants like S1_00001 exist with different reel sizes but share identical electrical characteristics and package type.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet or source material. Consult manufacturer catalogs for direct replacements if necessary.